 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1 to-220f item symbol rating unit remarks drain-source voltage v ds 60 continuous drain current i d 45 pulsed drain current i d[puls] 180 gate-source peak voltage v gs 20 maximum avalanche energy e av 461.9 maximum power dissipation p d 40 operating and storage t ch +150 temperature range t stg 2SK2897-01MR fuji power mosfet n-channel silicon power mosfet equivalent circuit schematic maximum ratings and characteristics absolute maximum ratings (tc=25c unless otherwise specified) v a a v mj w c c -55 to +150 fap-iiib series electrical characteristics (t c =25c unless otherwise specified) thermal characteristics item symbol zero gate voltage drain current i dss min. typ. max. units v v a ma na m ? m ? s pf ns a v ns c min. typ. max. units thermal resistance r th(ch-c) r th(ch-a) 3.125 62.5 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss t d(on) t r t d(off) t f i av v sd t rr q rr test conditions i d =1ma v gs =0v i d =1ma v ds =v gs v ds =60v v gs =0v t ch =25c t ch =125c v gs = 20v v ds =0v i d =22.5a v gs =10v i d =22.5a v ds =25v v ds =25v v gs =0v f=1mhz v cc =30v r g =10 ? i d =45a v gs =10v l=100 h t ch =25c i f =45a v gs =0v t ch =25c i f =45a -di/dt=100a/ s t ch =25c 60 1.0 1.5 2.0 10 500 0.2 1.0 10 100 15 20 10 12 15 35 2900 4350 930 1400 260 390 13 30 35 50 190 290 75 140 45 0.95 1.43 55 0.10 gate(g) source(s) drain(d) outline drawings features high speed switching low on-resistance no secondary breakdown low driving power high voltage avalanche-proof applications switching regulators dc-dc converters general purpose power amplifier www.fujielectric.co.jp/fdt/scd *1 l=0.304mh, vcc=24v item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge *1 v gs =4v v gs =10v 200509
2 characteristics 2SK2897-01MR fuji power mosfet 3 fuji power mosfet 2SK2897-01MR 4 2SK2897-01MR fuji power mosfet www.fujielectric.co.jp/fdt/scd |
Price & Availability of 2SK2897-01MR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |